A database of InAs, QDs, MBE growth, capping, photoluminescence, coupling, and applications
Automate extraction for "A database of InAs, QDs, MBE growth, capping, photoluminescence, coupling, and applications". Extract structured, evidence-grounded data points directly from hundreds of papers with source page coordinates.
Schema Field Definitions (27)
| Field Name | Data Type | Description |
|---|---|---|
| substrate_material | string | The material used as the substrate for growth. Must be one of: GaAs, InP, Si, Ge, AlGaAs. |
| substrate_orientation | string | The crystallographic orientation of the substrate. Example: '(100)'. |
| growth_temperature | number | The temperature of the substrate during the growth of the InAs quantum dots. |
| growth_temperature_unit | string | The unit for the growth temperature. Use '°C' or 'K'. Example: '°C'. |
| growth_rate | number | The rate at which InAs is deposited. |
| growth_rate_unit | string | The unit for the growth rate. Use 'ML/s' or 'nm/s'. Example: 'ML/s'. |
| inas_deposition_amount | number | The total amount of InAs deposited to form the quantum dots. |
| inas_deposition_amount_unit | string | The unit for InAs deposition amount. Use 'ML' for monolayers. Example: 'ML'. |
| v_iii_flux_ratio | number | The flux ratio between Group V (e.g., Arsenic) and Group III (e.g., Indium) elements during growth. |
| capping_material | string | The material used to cap or overgrow the quantum dots. Must be one of: GaAs, InGaAs, GaAsSb, GaNAs, InAlAs, AlGaAs, InAlGaAs, InP. |
| capping_layer_thickness | number | The thickness of the primary capping layer. |
| capping_layer_thickness_unit | string | The unit for capping thickness. Example: 'nm'. |
| qd_density | number | The surface density of the quantum dots. |
| qd_density_unit | string | The unit for QD density. Example: 'cm^-2'. |
| pl_peak_wavelength | number | The peak wavelength observed in the photoluminescence spectrum |
| pl_peak_wavelength_unit | string | The unit for the PL peak wavelength. Example: 'nm'. |
| pl_fwhm | number | The Full Width at Half Maximum of the photoluminescence peak. |
| pl_fwhm_unit | string | The unit for PL FWHM. Use 'meV' or 'nm'. Example: 'meV'. |
| pl_measurement_temperature | number | The temperature at which the photoluminescence spectrum was measured. |
| pl_measurement_temperature_unit | string | The unit for PL measurement temperature. Use 'K'. Example: '77 K'. |
| is_coupled | boolean | Indicates if the quantum dots are part of a coupled system (e.g., stacked layers). Must be true or false. |
| spacer_layer_thickness | number | The thickness of the spacer layer separating coupled quantum dot layers. |
| spacer_layer_thickness_unit | string | The unit for the spacer layer thickness. Example: 'nm'. |
| coupling_type | string | The type of coupling observed. Must be one of: Electronic, Strain-mediated, Optical, None. |
| application_type | string | The primary technological application discussed for the QD system. Must be one of: Laser, Solar Cell, Single-photon Source, Photodetector, Intermediate Band Solar Cell, Quantum Computing. |
| doi | string | The Digital Object Identifier (DOI) or a full bibliographic reference for the source paper. |
| Growth technique used | string | Must be Molecular Beam Epitaxy |
Data Verification Status Taxonomy
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Value located and extracted from the full-text PDF by the Kateeb engine.
An independent second model produced a compatible value during automated second-pass review.
A named researcher audited the value against the visual page coordinates.
Performance evaluated against a standardized, published evaluation protocol.
An independent external research group reproduced the extraction and experimental result.
